| 摘要: |
| 使用Nb箔作中间层对常压烧结SiC陶瓷进行了真空扩散连接。在最初的反应阶段,六方晶的Nb2C和Nb5Si3Cx反应物分别在Nb和Si侧形成。随着连接时间的增加,立方晶的NbC和六方晶的NbSi2相在界面出现。试验结果表明,在1790K、36ks的连接条件下所获得的接头,其室温剪切强度达到187MPa,高温(973K)剪切强度超过150MPa。 |
| 关键词: 扩散连接 界面反应 接合强度 碳化硅陶瓷 |
| DOI： |
| 分类号: |
| 基金项目:国家博士后基金 |
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| Interface Structures and Bonding Strength of SiC/Nb/SiC Diffusion Bonded Joint |
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Feng Jicai, Liu Huijie, Han Shengyang, Li Zhuoran, Zhang Jiuhai
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Harbin Institute of Technology
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| Abstract: |
| Pressureless-sintered (PLS) SiC was bonded to SiC through Nb foil interlayer by vaccum diffusion method.At the initial stage of reaction,a hexagonal Nb2C phase and a hexagonal Nb5Si3Cx phase occured on the Nb side and on the SiC side,respectively.With the increase in bonding time,a cubic NbC phase and a hexagonal NbSi2 phase appeared at the interface.The experimental results showed that shear strengrh of the joint,which was bonded at 1790 K for 36ks,was up to 187 MPa at room temperature and more than 150 MPa at the test tempeature of 973 K. |
| Key words: diffusion bonding interface reaction bonding strength SiC ceramic |
