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| 氮电弧制备陶瓷表面层中TiN相形态及生长机制 |
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郑孝义1, 丛大志2, 李欣1, 赵磊1, 刘玉华1, 任振安3,4
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1.吉林大学材料科学与工程学院, 长春 130022;2.上海核工程研究设计院, 上海 200233;3.
1. 吉林大学材料科学与工程学院, 长春 130022;4.
2. 上海核工程研究设计院, 上海 200233
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| 摘要: |
| 利用氮电弧熔化纯钛基体表面,原位制备氮化钛(TiN)陶瓷表面层,研究陶瓷表面层的形成机理、TiN相的生长形态及其生长机制.结果表明,氮电弧熔化过程为非平衡快速冷却凝固过程,冷却速度可达102~103 K/s,表面层中TiN相的微观生长方式具有多样性.在熔池中过冷度较小的位置,TiN晶体为螺型位错侧面长大方式,而熔池底部过冷度较大,其微观生长方式转变为连续生长和侧面台阶生长两种方式交替生长模式. |
| 关键词: 氮电弧 氮化钛 机理 生长形态 |
| DOI： |
| 分类号: |
| 基金项目:国家自然科学基金资助项目(51101072);吉林大学基本科研业务费资助项目(200903017) |
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| Morphologies and growth mechanism of TiN in ceramic surface layers prepared by nitrogen arc |
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ZHENG Xiaoyi1, CONG Dazhi2, LI Xin1, ZHAO Lei1, LI Yuhua1, REN Zhenan3,4
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1.College of Materials Science and Engineering, Jilin University, Changchun 130022, China;2.Shanghai Nuclear Engineering Research & Design Institute, Shanghai 200233, China;3.
1. College of Materials Science and Engineering, Jilin University, Changchun 130022, China;4.
2. Shanghai Nuclear Engineering Research & Design Institute, Shanghai 200233, China
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| Abstract: |
| The titanium nitride(TiN) ceramic surface layers were in-situ prepared by nitrogen arc melting on the surface of pure titanium substrates. The formation mechanism of the ceramic layers, the growth morphologies and mechanism of the TiN phase were investigated. The results show that the nitrogen arc melting is a non-equilibrium rapid cooling process and the cooling rate can be as high as 102~103 K/s. The micro growth modes of the TiN phase in ceramic surface layers exhibit the diversity. The TiN crystal grows up by the spiral dislocation lateral growth mode at the location of low undercooling in the molten pool. Because of the undercooling increased at the bottom of the molten pool, the micro growth mode changes to the alternating between the continuous growth and the lateral growth. |
| Key words: nitrogen arc titanium nitride morphology growth mechanism |
