| 摘要: |
| 硅功率器件的开关性能已随其结构设计和制造工艺的完善而接近由其材料特性决定的理论极限，难以满足新一代高性能弧焊逆变电源对紧凑体积、高温、高功率密度、高压、高频以及抗辐射等恶劣工况条件的新要求.宽禁带（WBG）半导体是一种革命性的电力电子材料，已成为下一代电力电子器件的主攻方向.主要介绍WBG功率器件的基本特点、类型以及发展情况，重点介绍WBG功率器件应用于弧焊逆变电源时需要重点解决的关键科学和技术问题，为促进和推动下一代WBG弧焊逆变电源的发展和应用奠定基础. |
| 关键词: 宽禁带半导体 碳化硅功率器件 电弧焊 |
| DOI： |
| 分类号: |
| 基金项目:国家自然科学基金资助项目（51375173）；广东省科技计划资助项目（2013B011302006、2013B010402007、2014B010104002、2014B090901030）；中央高校基本科研业务费培育项目（2015ZP039） |
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| A new generation WBG arc welding inverter |
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WANG Zhenmin, WANG Qian, WANG Pengfei, ZHANG Qin
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School of Mechanical and Automobile Engineering, South China University of Technology, Guangzhou 510640, China
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| Abstract: |
| With perfect structural design and manufacturing processes, the switching performance of Si power devices has reached the theoretical limit determined by material properties, and is unable to meet requirements for compact size, high temperature, high power density, high voltage, high frequency and anti-radiation and other harsh working conditions for new generation of high-performance arc welding inverter. Wide bandgap (WBG) semiconductor is a revolutionary power electronic material, and it is the main development direction for next generation of power electronic devices. This paper describes the basic characteristics, types and development of WBG power devices, and focuses on urgent and key scientific and technical issues when WBG power devices are applied to arc welding inverter. This research lays a foundation for facilitating and promoting the development and application of next generation WBG arc welding inverter. |
| Key words: WBG semiconductor SiC power devices arc welding |
