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一种基于点压技术的新型晶圆键合方法
许维1,2, 王盛凯1,2, 徐杨2,3, 王英辉3, 陈大鹏3, 刘洪刚1,2
1.中国科学院微电子研究所 微电子器件与集成技术重点实验室, 北京 100029;2.中国科学院微电子研究所 高频高压器件与集成研发中心, 北京 100029;3.中国科学院微电子研究所 智能感知研发中心, 北京 100029
摘要:
金金热压键合法在半导体制造领域中应用广泛,为了进一步改进该键合方法,首次提出了一种基于点压技术的新型晶圆键合方法,并研究了工艺温度、压强以及时间对点压键合法单点键合面积的影响. 通过超声扫描显微镜图像,着重比较了传统金金热压键合法与点压键合法的键合面积比. 对点压键合法的可选择键合性进行了讨论. 结果表明,点压键合法工艺步骤简单,工艺稳定性较好,且具有一定的可选择键合特性,在半导体制造领域中将具有广泛的应用前景.
关键词:  晶圆键合  热压键合  金金键合  点压键合法
DOI:
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A new wafer bonding method based on spot pressing technique
XU Wei1,2, WANG Shengkai1,2, XU Yang2,3, WANG Yinghui3, CHEN Dapeng3, LIU Honggang1,2
1.Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Beijing 100029, China;2.Microwave Device and IC Dept., Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;3.Smart Sensing R & D Centre, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Abstract:
Au-Au thermocompression bonding is widely used in many applications of semiconductor manufacturing. In order to improve the bonding method, a new wafer bonding method based on spot pressing technique was proposed for the first time. The bonded area dependence of bonding temperature, pressure and time were investigated. In addition, the bonded area ratio was compared between conventional Au-Au thermocompression bonding and spot pressing bonding by the image of scanning acoustic microscopy. The bonded area selectivity of SPB was discussed at the end of this article. The results show that the bonding process is simple and stable and the bonded area selectivity is also good in spot pressing bonding. which has an extesive prospect in applications of semiconductor manufacturing.
Key words:  wafer bonding  thermocompression bonding  Au-Au bonding  spot pressing bonding