硅-玻璃-硅阳极键合机理及力学性能

Mechanism and mechanical property of Si-glass-Si anodic bonding process

关键词:  阳极键合|硅-玻璃-硅|电子封装|键合强度

Key words:  anodic bonding|Si-glass-Si|electronic packaging|bonding strength

摘要:

采用两步法阳极键合技术成功实现了硅-玻璃-硅的连接. 两次键合过程中，电流特征有明显差异，第一次键合电流先迅速增大到峰值电流，然后迅速衰减至一较小值. 受先形成Na⁺离子耗尽层的影响，第二次键合电流从峰值电流衰减的过程中，出现二次增大然后衰减的现象. 利用扫描电镜对键合界面进行观察，结果表明玻璃两侧界面均键合良好，玻璃表面可观察到大量析出物. 利用万能材料试验机对键合强度进行测试，结果表明，界面强度随着键合电压的升高而增大. 断裂主要发生在玻璃基体内部靠近第二次键合界面一侧.

Abstract:

Si-glass-Si was successfully bonded together through a two-step anodic bonding process. The bonding current in each step of the two-step bonding process was investigated, and found to be quite different. The first bonding current decreased quickly to a relatively small value. But for the second bonding step, there were two current peaks, the current varified as decrease-increase-decreased rule. SEM was conducted to investigate the interfacial structure of the Si-glass-Si samples. Tensile tests indicated that the fracture occurred at the glass substrate and bonding strength increased with the increment of the bonding voltage.